SIA406DJ-T1-GE3

SIA406DJ-T1-GE3 datasheet

Маркировка

SIA406DJ-T1-GE3
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology SIA406DJ-T1-GE3 Continuous Drain Current Id: 4.5A Current - Continuous Drain (id) @ 25?° C: 4.5A Drain Source Voltage Vds: 12V Drain To Source Voltage (vdss): 12V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 23nC @ 5V ID_COMPONENTS: 1715918 Input Capacitance (ciss) @ Vds: 1380pF @ 6V Mounting Type: Surface Mount On Resistance Rds(on): 19.8mohm Package / Case: PowerPAK?® SC-70-6 Power - Max: 19W Rds On (max) @ Id, Vgs: 19.8 mOhm @ 10.8A, 4.5V Rds(on) Test Voltage Vgs: 4.5V Series: TrenchFET?® Threshold Voltage Vgs Typ: 1V Transistor Polarity: N Channel Vgs(th) (max) @ Id: 1V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: +/- 8 V Continuous Drain Current: 4.5 A Resistance Drain-Source RDS (on): 19.8 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Minimum Operating Temperature: - 55 C Power Dissipation: 19 W Part # Aliases: SIA406DJ-GE3 Other Names: SIA406DJ-T1-GE3TR
Количество страниц

7 шт.
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